| 摘要 |
PROBLEM TO BE SOLVED: To reduce manufacturing processes by forming a semiconductor region which forms one electrode of an information storage capacitive element of a dynamic memory cell and a semiconductor region connected to a drain region of a non-volatile memory cell in the same manufacturing process. SOLUTION: A process for forming a semiconductor region 7 which forms a lower electrode of an information storage capacitive element C of a memory cell DM and a process for forming a semiconductor region 7 of a field-effect transistor Qf of a memory cell FM are performed in a same manufacturing process, and thereafter, a process for forming dielectric film 8 of the information storage capacitive element C and a process for forming a tunnel insulating film 8 of the field-effect transistor Qf are performed in the same manufacturing process, thereby the semiconductor region 7 and the tunnel insulating film 8 of the field-effect transistor Qf can be formed in a process wherein the semiconductor region 7 and the dielectric film 8 of the information storage capacitive element C are formed. As a result, the manufacturing processes of a semiconductor integrated circuit device can be reduced. |
