发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can be surely enhanced in reliability by a method wherein the joint of an electrode is protected against cracking caused by distortion even if a heat cycle is repeatedly made to act on the joint of the electrode. SOLUTION: A bump 21 is formed to serve as a protrudent electrode corresponding to the lead terminal of a silicon chip 11 where circuit components are formed and made up with a cylindrical circumferential part 21a which rises up facing towards a board 12, a plane part 21b formed as an end face which confronts a conductor layer 14 in parallel, and a curved face part 21c as a round corner of the circumferential part 21a and the plane part 21b. A solder member 22 is formed like a barrel possessed of a protrudent part 22a in a radial direction to cover up the parts 21a, 21b, and 21c of the bump 21. Furthermore, the diameter ratio of the bump 21 to the conductor layer 14 which is arranged confronting the bump 21 is set to 1:1±0.3.
申请公布号 JPH09107005(A) 申请公布日期 1997.04.22
申请号 JP19960257989 申请日期 1996.09.30
申请人 DENSO CORP 发明人 WATANABE YUSUKE;KUNDA HACHIROU;TANAKA KAZUO;KUGAI SATOSHI;ABE KICHIJI;MAYAMA KEIJI
分类号 H01L21/60;H01L23/12;H05K3/34 主分类号 H01L21/60
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