发明名称 SPUTTERING TARGET AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To produce a ceramic sputtering target less liable to generate nodules at the time of sputtering and hardly causing abnormal electric discharge and the occurrence of particles. SOLUTION: This sputtering target is a ceramic (ITO, et.) sputtering target produced by powder metallurgical processing, the center line average roughness Ra of the surface to be sputtered is 0.1-3.0&mu;m and the average peak-to-peak interval (Sm value) of the surface roughness curve is >=150&mu;m. In the case of an ITO target, the density D (g/cm<3> ) and bulk resistance &rho; (m&Omega;cm) satisfy 6.20<=D<=7.23 and -0.0676D+0.887>=&rho;>=-0.0761D+0.666, respectively. The surface properties are attained by carrying out blasting with glass, alumina or zirconia beads of <=500&mu;m diameter as a blasting material.
申请公布号 JPH09104973(A) 申请公布日期 1997.04.22
申请号 JP19960153342 申请日期 1996.05.24
申请人 JAPAN ENERGY CORP 发明人 SAITO TORU;KUMAHARA YOSHIKAZU;SUZUKI YUJI
分类号 C04B35/00;C04B35/457;C04B35/495;C23C14/08;C23C14/34;H01B13/00 主分类号 C04B35/00
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