SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To fill a contact hole made in an interlayer insulation layer completely with a metal by providing at least one auxiliary conductive layer pattern in the interlayer insulation layer contiguously to the contact hole. SOLUTION: A first interlayer insulation layer 23 is formed on a semiconductor substrate 21 and a first linear auxiliary conductive layer pattern 25 is formed thereon contiguously to a specified position. A second interlayer insulation layer 27 is then formed on the first interlayer insulation layer 23 and a second linear auxiliary conductive layer pattern 29 is formed thereon contiguously to a specified position. Subsequently, a third interlayer insulation layer 31 is formed on the second interlayer insulation layer 27 and a contact hole 33 is made at a specified position in order to expose the surface of semiconductor substrate 21. Since auxiliary conductive layer patterns having batter heat conduction characteristics than the interlayer insulation layer are formed, heat is transmitted quickly to the periphery of contact hole which can thereby be filled completely with a metal.