发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a low power semiconductor memory by decreasing the number of data lines making transition of level in access. SOLUTION: A data I/O driver 18a drives only the normal data line DIO of a pair of third data lines upon receiving a data DIN. A global I/O driver 22a drives only the normal data line GIO of a pair of second data lines according to a data signal on the normal data line DIO. In other words, the data DIN is transmitted only on the normal data lines DIO, GIO. A local switch 65 transmits data signal on the normal data line GIO to a normal data line LIO of a pair of first data lines and transmits the inverted data signal on the normal data line GIO to an auxiliary data line LIOB of the pair of first data lines. Since a data is transmitted on only one normal data line up to a pair of first data lines LIO/LIOB, current consumption of data line is suppressed greatly.</p>
申请公布号 JPH09106680(A) 申请公布日期 1997.04.22
申请号 JP19960259243 申请日期 1996.09.30
申请人 SAMSUNG ELECTRON CO LTD 发明人 YANAGI SAIKAN;KOU BOKUBUN
分类号 G11C11/409;G11C7/10;G11C11/34;G11C11/4091;G11C11/4096;(IPC1-7):G11C11/409 主分类号 G11C11/409
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