MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method, which can perform a pattern work on a resist coated on the surface of a semiconductor substrate simply and with high dimensional accuracy. SOLUTION: Light 1 is radiated on a resist 4 through a mask 2 and functional groups or compounds having active hydrogen are respectively made to produce in exposed parts 3. A silicon compound having a silyl group is fed to a resist surface 4a, the active hydrogen of the functional groups or the compounds is substituted for the silyl group and the surfaces 3a of the exposed parts 3 are selectively silitated to the surface 13a of a non-exposed part 13. Oxygen plasma is radiated on the resist surface 4a and the surfaces 3a of the parts 3 are selectively changed into a hydrophilic nature to the surface 13a of the part 13. Silicon oxide films 12 are respectively formed selectively on the hydrophobic surfaces 3a of the parts 3 by a liquid phase growth method using an aqueous solution of fluorosilicic acid to the surface 13a of the part 13. An anisotropic dry etching is performed on the resist 4 using the films 12 as masks to process the resist 4.