MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To carry out a wafer cleaning treatment capable of being shared with a wafer-cleaning cluster tool for treating a multi-chamber by bringing a silicon substrate into contact with a mixed gas containing a hydrofluoric acid anhydride and bringing the silicon substrate into contact with a chlorine gas flow irradiated with wide-band UV. SOLUTION: A silicon substrate is brought into contact with a mixed gas containing a hydrofluoric acid anhydride for the time sufficient for removing a natural oxide from the surface of the silicon substrate. The silicon substrate is brought into contact with a chlorine gas flow exposed to wide-band ultraviolet radiation having wavelengths within a range from approximately 200nm to approximately 1100nm. A required oxide layer is grown on the surface of the cleaned silicon substrate, and a semiconductor device is formed to the silicon substrate. The mixed gas comprising the hydrofluoric acid anhydride further contains methanol and nitrogen, and the composition of the mixed gas is selected so that the etching rate of silicon dioxide on the surface of the substrate reaches approximately 50Åfrom approximately 1Å.