| 发明名称 |
Semiconductor memory device having data erasing mechanism |
| 摘要 |
In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.
|
| 申请公布号 |
US5623445(A) |
申请公布日期 |
1997.04.22 |
| 申请号 |
US19950440253 |
申请日期 |
1995.05.12 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NARUKE, KIYOMI;SUZUKI, TOMOKO;YAMADA, SEIJI;OBI, ETSUSHI;OSHIKIRI, MASAMITSU |
| 分类号 |
G11C16/16;G11C16/34;H01L27/115;H01L29/788;(IPC1-7):G11C11/40 |
主分类号 |
G11C16/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
