| 摘要 |
A MOSFET is provided in the body silicon layer of an SOI substrate, for example as a mesa. A source region, a channel region, and a drain region are present. A gate electrode having a portion as a ridge on this channel region is also provided. For electrical connection of the channel region, a highly doped, preferably laterally arranged channel terminal region that is electrically conductively connected to the channel region and that has a contact applied thereon.
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