| 摘要 |
FIELD: my of rare and trace elements. SUBSTANCE: invention focuses on technique of separation of secondary raw material based on gallium arsenide contained in worked out devices in electronic and semiconductor industries. Method provides low-temperature separation of gallium arsenide into original components - gallium and arsenic with high yield and low power consumption. Method is based on electrochemical technique. Arsenic is converted from gallium arsenide by way of cathode polarization in alkali electrolytes into arsenic hydride, which, in the course of electrolysis, is continuously thermally decomposed to produce high-purity arsenic. Surface of gallium arsenide, as arsenic hydride is being formed, is enriched in metal gallium. Electrolytic device consists of cylindrical container with cation-exchange diaphragm separating container into cathode and anode spaces, wherein cathode is gallium arsenide placed in rotating bulky electrode, 1/4 part of which is immersed in metal mercury. During the time cathode polarization occurs, surface of gallium arsenide is enriched in metal gallium, which, upon rotation of bulky electrode, contacts with metal mercury and dissolves therein. Mercury accumulates up to 10-20% gallium that is further isolated from gallium amalgam via electrolysis. EFFECT: increased yield and improved working condition. 1 dwg |
