发明名称 |
A mos transistor having a composite gate electrode and method of fabrication |
摘要 |
A novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode. |
申请公布号 |
HK43297(A) |
申请公布日期 |
1997.04.18 |
申请号 |
HK19970000432 |
申请日期 |
1997.04.10 |
申请人 |
INTEL CORPORATION |
发明人 |
ROBERT S CHAU;DAVID B FRASER;KENNETH C CADIEN;GOPAL RAGHAVAN;LEOPOLDO D YAU |
分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/78;H01L29/40 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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