| 摘要 |
PROBLEM TO BE SOLVED: To increase the light emitting output of a blue light emitting device by providing a gas transmission part with a fine gap for transmitting hydrogen gas which is eliminated from a p-type nitrogen potassium compound semiconductor layer when performing annealing. SOLUTION: A gas permeation part with a fine gap is provided at a p-type electrode 5. In a light emitting device which is electrically connected to a p-type GaN layer 4A by annealing the p-type electrode 5, the electrical resistance of the p-type GaN layer 4A partially differs by annealing. A gas permeation part allows hydrogen gas to permeate from the p-type GaN layer 4A by annealing treatment. Therefore, in a part corresponding to the gas permeation part of the p-type GaN layer 4A, hydrogen is eliminated and hence electrical resistance becomes small, current easily flows, and light emission output becomes stronger. Hydrogen gas permeates the p-type electrode 5, which eliminates the hydrogen gas in the p-type Ga layer 4A when it is electrically connected to the p-type GaN layer 4A by annealing treatment and transmits the light emitted from the p-type GaN layer 4A when it emits light. |
