High resolution excimer laser exposed photoresists

摘要

A light-sensitive compsn. for pattern-formation by exposure to either an ArF- or an F2-excimer laser contains a cpd. with a group (A) which is either: (i) decomposable; or (ii) crosslinkable by an acid; and a cpd. of formula (I): Ar<1> and Ar<2> = aromatic (opt. condensed) ring; R1 and R2 = halogen or monovalent organic group; X = CF3SO3, CH3SO3, CF3COOH, CRO4, SbF6 or AsF6 group; Z = Cl, Br, I, S-R or Se-R; R = 1-10C (perfluoro)alkyl; and m and n = 0 or a positive number.