| 摘要 |
A gate-follower storage cell (12) and a diode-connected storage cell (32) for use in integrated circuit analog signal recording and playback is disclosed. The gate-follower storage cell (12) is used in negative feedback mode to provide a one to one variation between the cell threshold and the gate voltage in the read mode. The diode-connected storage cell (32) is connected in a diode configuration to provide a one-to-one variation between the cell threshold and the gate voltage in the read mode. The gate-follower or diode-connected storage cells may be implemented in a memory array for storing analog signals. In a preferred embodiment, the memory array provides wordlines which are accessible through column drivers (52). Each row or wordline is divided into a plurality of sector wordlines by inserting select transistors in the array. Each sector is driven by a column driver (52). In the read and programming modes, the sector wordlines are isolated from each other and are provided to the column drivers (52) through additional select transistors. Only one memory cell from each sector wordline is read or programmed at a given time. In the erase mode, all sectors of a wordline are connected together through the select transistors, so that the erase operation may be accomplished for a complete row at a given time.
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