Hochspannung-Dünnfilmtransistor mit einer Drift-Zone mit einem linearen Dopierungsprofil und mit einer Feldplatte

摘要

The present invention involves an improvement in the structure and method for making a high voltage thin film transistor of the silicon-on-insulator (SOI) type. In particular, the present invention sets forth the structure and technique for making this improved structure in which a gate electrode is formed extending over the linear doping profile so as to shield the drift region from external electric fields and decrease on-state resistance.