Herstellungsverfahren von einer Halbleitervorrichtung mit einer begrabenen Kontaktstruktur,申请号DE1993608727-传众专利搜索

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发明名称	Herstellungsverfahren von einer Halbleitervorrichtung mit einer begrabenen Kontaktstruktur
摘要
申请公布号	DE69308727(D1)	申请公布日期	1997.04.17
申请号	DE1993608727	申请日期	1993.10.25
申请人	NEC CORP., TOKIO/TOKYO, JP	发明人	YAMADA, YOSHIAKI, C/O NEC CORPORATION, TOKYO, JP;KAJIYANA, KIYONORI, C/O NEC CORPORATION, TOKYO, JP
分类号	H01L21/28;H01L21/02;H01L21/302;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/74;H01L21/768;H01L23/48;H01L23/52;(IPC1-7):H01L21/74;H01L23/485;H01L21/321	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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