发明名称 Process for production of an electrode on an active matrix substrate
摘要 <p>A process for producing a semiconductor device comprises a step of polishing of a region of an electroconductive material serving as an electrode or a wiring line in an insulating layer formed on a semiconductor region, the region of the electroconductive material being electrically connected to the semiconductor region, wherein a region of another material is formed within the region of the electroconductive material to be polished. Also a semiconductor device having the region is provided. A process for producing an active matrix substrate comprises a step of polishing of picture element electrodes made of a metal provided on crossing portions of plural signal lines and plural scanning lines and a means for applying voltage to the picture elements, wherein a region of another material is formed within the region of the picture element electrode to be polished. An active matrix substrate has such picture element electrodes as mentioned above. &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP0768710(A2) 申请公布日期 1997.04.16
申请号 EP19960306683 申请日期 1996.09.13
申请人 CANON KABUSHIKI KAISHA 发明人 FUKUMOTO, YOSHIHIKO
分类号 G02F1/136;G02F1/1335;G02F1/1362;G02F1/1368;G09F9/30;H01L21/02;H01L21/304;H01L21/306;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L27/12;(IPC1-7):H01L21/768 主分类号 G02F1/136
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