Capacitive acceleration sensor

摘要

The sensor (10) has a planar structure and has a movable cantilevered structure (2) arranged in a hollow space (13), which varies the capacitance. The sensor is formed from two semiconductor bodies (1a,1b), which have different recess types which form the hollow space when the bodies are connected to each other. The cantilevered structure is arranged in one of the recesses and is connected to the semiconductor body (1b) bearing that particular recess such that the structure can move freely perpendicular to the surface of both semiconductor bodies. The semiconductor bodies are connected via a thermally grown oxide layer (4).