| 摘要 |
An imaging device for imaging high energy radiation (14), said imaging device comprising an array of pixel cells (18) having a semiconductor substrate including an array of pixel detectors (19), which generate charge in response to incident radiation and a corresponding array of pixel circuits (20), each pixel circuit being associated with a respective pixel detector for accumulating charge resulting from radiation incident on said pixel detector, being individually addressable and comprising charge accumulation circuitry for accumulating charge from radiation incident on the respective pixel detectors, wherein said charge accumulation circuitry in a pixel circuit is configured to provide a charge storage capacity sufficient to store at least 1.8 million electrons for accumulating charge from a plurality of successive high energy radiation hits on the respective pixel detector.
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