发明名称 |
Method of manufacturing a semiconductor memory device having a capacitor |
摘要 |
In a semiconductor memory device having a novel structure of a wiring layer and a large capacitance capacitor and the manufacturing method therefor, on the transistor formed on the semiconductor substrate, a first conductive layer is formed extending along with the gate electrode of the transistor and connecting with the gate electrode, a storage electrode of a capacitor is formed on the first conductive layer by interposing the insulation film between the first conductive layer and the source region of the transistor, and a second conductive layer is formed in connection with the first conductive layer at a portion between memory cell array and the peripheral circuit region. Storage electrodes can be made thicker without affecting to the step-difference between memory cells and the peripheral circuit region, so that a more reliable semiconductor memory device with a capacitor having a larger capacitance can be realized.
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申请公布号 |
US5620917(A) |
申请公布日期 |
1997.04.15 |
申请号 |
US19960615087 |
申请日期 |
1996.03.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON, JOO-YOUNG;NAM, IN-HO |
分类号 |
H01L27/10;H01L27/105;H01L27/108;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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