发明名称 TEMPERATURE CONTROLLING METHOD AND DEVICE IN VACUUM FILM-FORMING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To rapidly increase or decrease the temperature of a substrate to be formed with a film in multiple steps within a same vacuum bath, at the same time provide a method for controlling the substrate temperature with improved stability, and provide a device which is suited for executing the method. SOLUTION: In a method for forming a film by placing a substrate 7 on a hot plate 6 which is installed in a vacuum bath 1, increasing or decreasing a substrate temperature, and performing CVD, sputtering, or deposition, the minimum temperature of the substrate when a film is formed is controlled by the hot plate 6, the hot plate 6 is operated when increasing the temperature of the substrate 7, and at the same time the light of an infrared ray lamp 11 provided outside the vacuum bath 1 is applied to the substrate 7 via a light transmission window 9 provided at the vacuum bath 1. The hot plate 6 has a static chucking mechanism 5 for attracting the substrate 7, disables the static chucking mechanism 5 when treating the substrate 7 at a high temperature, and operates the substrate 7 when cooling the substrate 7.</p>
申请公布号 JPH09102534(A) 申请公布日期 1997.04.15
申请号 JP19950257863 申请日期 1995.10.04
申请人 ULVAC JAPAN LTD 发明人 HIGUCHI YASUSHI;NAGANO KENZO;KOMATSU TAKASHI;NAKAMURA KYUZO
分类号 B23Q3/15;H01L21/203;H01L21/205;H01L21/285;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 B23Q3/15
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