Semiconductor memory device

摘要

A power source potential VDD and a ground potential GND are supplied to a memory cell which belongs to a selected column. The power source potential VDD and an intermediate potential Vp are supplied to a memory cell which belongs to a non-selected column. Even if an access transistor of the memory cell which belongs to a selected word line and the non-selected column conducts, a current which flows in a drive transistor is suppressed.