发明名称 High density CMOS integrated circuit with heat transfer structure for improved cooling
摘要 A semiconductor integrated circuit includes a semiconductor circuit chip housed in a package. The package provides for electrical interface of the integrated circuit chip with external circuitry, and also provides environmental protection for the circuit chip. The circuit chip includes a circuit portion which liberates heat into the semiconductor substrate of the chip during operation of the integrated circuit. The integrated circuit chip also includes a layer of insulative material which overlies the semiconductor substrate. A thermally conductive plug member penetrates through the layer of insulative material and extends into a hole formed in the semiconductor substrate. This plug member is in conductive heat transfer relation with the material of the semiconductor substrate, and connects thermally with high-conductivity heat transfer structure conducting heat from the substrate to the package for liberation to the ambient.
申请公布号 US5621616(A) 申请公布日期 1997.04.15
申请号 US19950536002 申请日期 1995.09.29
申请人 LSI LOGIC CORPORATION 发明人 OWENS, ALEXANDER H.;PADMANABHAN, GOBI
分类号 H01L23/34;H01L23/367;(IPC1-7):H05K7/20 主分类号 H01L23/34
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