发明名称 |
High density CMOS integrated circuit with heat transfer structure for improved cooling |
摘要 |
A semiconductor integrated circuit includes a semiconductor circuit chip housed in a package. The package provides for electrical interface of the integrated circuit chip with external circuitry, and also provides environmental protection for the circuit chip. The circuit chip includes a circuit portion which liberates heat into the semiconductor substrate of the chip during operation of the integrated circuit. The integrated circuit chip also includes a layer of insulative material which overlies the semiconductor substrate. A thermally conductive plug member penetrates through the layer of insulative material and extends into a hole formed in the semiconductor substrate. This plug member is in conductive heat transfer relation with the material of the semiconductor substrate, and connects thermally with high-conductivity heat transfer structure conducting heat from the substrate to the package for liberation to the ambient.
|
申请公布号 |
US5621616(A) |
申请公布日期 |
1997.04.15 |
申请号 |
US19950536002 |
申请日期 |
1995.09.29 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
OWENS, ALEXANDER H.;PADMANABHAN, GOBI |
分类号 |
H01L23/34;H01L23/367;(IPC1-7):H05K7/20 |
主分类号 |
H01L23/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|