发明名称 |
In-situ cleaning of plasma treatment chamber |
摘要 |
A cleaning of a plasma chamber is done by a NF3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF3 plasma treatments, a low pressure (lower than 10-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor, silane, fluorine, a hydrate compound, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, water vapor and hydride compounds.
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申请公布号 |
US5620526(A) |
申请公布日期 |
1997.04.15 |
申请号 |
US19940279110 |
申请日期 |
1994.07.22 |
申请人 |
FUJITSU LIMITED;FUJITSU VLSI LIMITED |
发明人 |
WATATANI, HIROFUMI;DOKI, MASAHIKO;OKUDA, SHOJI;NAKAHIRA, JUNYA;KIKUCHI, HIDEAKI |
分类号 |
H01L21/302;C09K13/08;C23C16/44;H01L21/3065;H01L21/31;H01L21/316;(IPC1-7):C09K13/08 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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