发明名称 |
Method of manufacturing a semiconductor device using a spacer |
摘要 |
A semiconductor device and manufacturing method wherein a gate insulating film is formed on a semiconductor substrate. A gate is formed on the gate insulating film and a sidewall spacer is formed on respective sides of the gate. The substrate is etched at the respective sides of the gate to form respective recessed parts of the substrate. An insulating film is provided on the recessed parts of the substrate and the recessed parts are filled with a semiconductor layer. Impurity regions are formed contacting the semiconductor layer in the semiconductor substrate on the respective sides of the gate.
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申请公布号 |
US5620912(A) |
申请公布日期 |
1997.04.15 |
申请号 |
US19950462042 |
申请日期 |
1995.06.05 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
HWANG, LEE Y.;KIM, HONG S. |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/417;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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