| 发明名称 |
Superlattice semiconductor device |
| 摘要 |
A superlattice semiconductor device comprises superlattice layers (4a, 4a', 5a) stacked on the whole surface of a trench (20) formed in a semiconductor substrate or on the whole surface of a projection (30) extending from a surface of the semiconductor substrate.
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| 申请公布号 |
US5621222(A) |
申请公布日期 |
1997.04.15 |
| 申请号 |
US19890336622 |
申请日期 |
1989.04.10 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KIMURA, MIKIHIRO |
| 分类号 |
H01L29/201;H01L21/20;H01L21/331;H01L29/06;H01L29/41;H01L29/73;H01L29/737;H01L29/88;H01L31/0352;H01L31/10;H01L31/107;H01L49/00;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/201 |
| 代理机构 |
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代理人 |
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