Semiconductor device including a local interconnection between an interconnection layer and an adjoining impurity region

摘要

A p-type silicon substrate is provided at its main surface with n-type impurity regions with a space between each other. A gate electrode is formed on a region between the n-type impurity regions with a gate insulating film therebetween. A titanium silicide layer is formed in a region extending from a surface layer of the gate electrode to a surface layer of the n-type impurity region. The titanium silicide layer forms a local interconnection. A side wall insulating film remains on a side wall of the gate electrode on which the titanium silicide layer is not formed. Thereby, the semiconductor device can have a local interconnection which has high reliability and can be formed easily.