| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method, for a semiconductor device, in which the dimensional accuracy of the edge of a chip is ensured easily and by which a product yield is good. SOLUTION: Light-emitting regions 4 in which a resist pattern for LED array chips is formed on the surface of an N-type GaAsP layer 2 and in which light-emitting elements are formed and grid lines 5 which are used as reference lines for a dicing operation when individual chips are divided are formed simultaneously. Then, a resist film 9 is formed on the surface of a wafer, and a pattern is formed in such a way that parts of the grid lines 5 are opened. The width W1 of every opening part in the resist film 9 is a little larger than the width W2 of every grid line 5. Even when a mask is dislocated a little in the photolithographic etching operation of the resist film 9, the grid lines 5 can be used as the reference lines for the dicing operation by an etching operation. After that, the wafer is etched along the reference lines, and the individual chips are divided. |
