MANUFACTURE OF FIELD EMITTER ARRAY (FEA)

摘要

PROBLEM TO BE SOLVED: To manufacture a FEA(field emitter array) insulated reliably and having a large and uniform surface area at high reproducibility by carrying out isotropic etching of a silicon layer formed on an insulating layer substrate by evaporation through an oxide film mask and then forming field emission chips. SOLUTION: On an insulating layer substrate 20 such as glass, a polycrystalline or amorphous silicon layer 21 is formed by evaporation to give an n<+> layer. While using an oxide film disk pattern 22 formed on the silicon layer as a mask, the silicon layer 21 is etched by isotropic etching and then oxidized and a silicon oxide film 24 is formed to give conical-shaped field emission chips 23. Next, a silicon nitride film 25 formed on the chips is dry-etched to the removed while leaving the side wall parts and moreover insulating hollows 26 for mutual insulation of picture elements are formed. Then, formation of a gate insulating film 27 by secondary oxidation of the silicon layer 21, removal of the silicon nitride film 25, formation of contact windows 28, formation of a gate electrode 29 by metal evaporation, and formation of a cathode contact part 30 are successively carried out and then unnecessary parts are removed.