RESIN-SEALED SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device which is improved in its insulating and heat-radiating characteristics. SOLUTION: A power semiconductor device 12, a controlling integrated circuit device 13, etc., are mounted on metallic substrates 11a and 11b which are made by blanking operation to form part of a circuit. The devices and substrate are connected by a metallic thin wire 15. The metal substrates 11a and 11b are sealingly fixedly molded with first molding resin 16 having a high thermal conductivity between the substrates and on their bottom sides. The metal substrates 11a and 11b having the power semiconductor device 12 and so on mounted thereon are further molded and sealed with second molding resin 17 having a high thermal conductivity. One ends of the metal substrates 11a and 11b form external terminals 18. Since the metal substrates 11a and 11b are sealed at their peripheries with the first and second molding resins 16 and 17 having high thermal conductivities, the heat radiating characteristic is improved. When the resins are increased in their thickness, the dielectric strength of the semiconductor device is improved.