| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor wafer which is thin and whose flatness is high by a method wherein the thickness of the semiconductor wafer both the surface and the rear of which are polished is set at a specific value or lower and both the surface and the rear of the semiconductor wafer are set at a specific value or lower at a TTV. SOLUTION: In a silicon wafer W whose thickness is 500 to 200μm, the face on the opposite side of a polished face on the silicon wafer W one face of which is polished is ground, its thickness is reduced down to 105 to 120μm, and the ground face of the silicon wafer W is mirror-ground by using an abrasive disk while an abrasive cloth B is turned at high speed. By this polishing operation, the thickness of the silicon wafer W is reduced to 100μm or lower, and both the surface and the rear of the silicon wafer W are at at 1μm or lower at a TTV. Consequently, since wax is not used in its polishing process, it is possible to manufacture the semiconductor wafer W in which a wafer crack is not generated when it is stripped, which is thin and whose flatness is high.
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