| 摘要 |
A non-volatile memory unit (10) includes a memory cell (13) and a reference cell (20). The memory cell (13) includes a ferroelectric memory capacitor (14), which is polarized to store a logic data. The reference cell (20) includes two ferroelectric reference capacitors (25, 26) which are in polarization states (51, 52) complementary to each other. The capacitance of the reference capacitor (25, 26) tracks the capacitance of the memory capacitor (14). When reading data from the memory unit (10), an extraction signal (19A) generates a data voltage depending on the data stored in the memory unit (10), and a reference extraction signal (39A) generates a reference voltage through the reference capacitors (25, 26). A sense amplifier (42) senses the data voltage and the reference voltage, thereby reading data from the memory unit (10).
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