Surface emission type semiconductor laser, method and apparatus for producing the same

摘要

PCT No. PCT/JP95/00060 Sec. 371 Date Jul. 17, 1995 Sec. 102(e) Date Jul. 17, 1995 PCT Filed Jan. 20, 1995 PCT Pub. No. WO95/20254 PCT Pub. Date Jul. 27, 1995A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105). A surface emission type semiconductor laser is designed such that the lasing wavelength lambda G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength lambda EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) DELTA lambda EM.