PREPARATION METHOD OF PHASE SHIFT MASK FOR SEMICONDUCTOR PROCESS

摘要

A manufacturing method of phase inversion mask for manufacturing semiconductor comprising the step forming plural chrome pattern in constant intervals on a silica board; the step patterning phase inversion material in constant intervals on said chrome patterns; the step appling photoresist on the silica board having said chrome pattern and phase inversion material pattern; the step patterning said photoresist only on said phase inversion material and a portion of the chrome pattern by exposing and developing processes; the step appling light shielding material on the silica board and the chrome pattern exposed between said patterned photoresists ; the step etching back said applied light shield to form a light shielding membrane on side wall of th chrome pattern; and the step removing said patterned photoresist is disclosed. Thereby, it is possible to enhance the resolution and the focus depth of said patterned photoresist because the light intensities passed through the regions which has and doesn't have phase inversion material are same.