| 摘要 |
<p>A dynamic infrared scene projector for use infrared detections systems which has particular, although not exclusive, use in thermal imaging or seeker systems. In such systems, a dynamic infrared scene projector is used to simulate the thermal scene for testing and calibration purposes. The device comprises an array of electroluminescent semiconductor diode structures, capable of emitting both positive and negative luminescence, and electronic circuitry for supplying currents of both polarity to each diode independently so that the emission of positive and negative luminescence can be controlled. The diode structures in the array are based on narrow bandegap semiconductor materials, for example, the Hg1-xCdxTe, In1-xAlxSb, Hg1-xZnxTe or In1-xTlxSb materials systems (where x is the composition). In a preferred embodiment, the diodes are capable of emitting infrared radiation in the wavelength regions between 3-5 νm or 8-13 νm. By utilizing the negative luminescence properties of the diode structures, the dynamic infrared scene projector can simulate a wide range of temperatures, and in particular low temperatures, without external cryogenic cooling. The dynamic infrared scene projector also permits the use of faster thermal imager frame rates than are achievable with existing systems.</p> |
