发明名称 MICROWAVE PLASMA MONITORING SYSTEM FOR THE ELEMENTAL COMPOSITION ANALYSIS OF HIGH TEMPERATURE PROCESS STREAMS
摘要 <p>Microwave-induced plasma for continuous, real time trace element monitoring under harsh and variable conditions. The sensor includes a source of high power microwave energy and a shorted waveguide made of a microwave conductive, high temperature capability refractory material communicating with the source of the microwave energy to generate a plasma. The high power waveguide is constructed to be robust in a hot, hostile environment. It includes an aperture for the passage of gases to be analyzed and a spectrometer is connected to receive light from the plasma. Provision is made for real time in situ calibration. The spectrometer disperses the light, which is then analyzed by a computer. The sensor is capable of making continuous, real time quantitative measurements of desired elements, such as the heavy metals lead and mercury. The invention may be incorporated into a high temperature process device and implemented in situ for example, such as with a DC graphite electrode plasma arc furnace. The invention further provides a system for the elemental analysis of process streams by removing particulate and/or droplet samples therefrom and entraining such samples in the gas flow which passes through the plasma flame. Introduction of and entraining samples in the gas flow may be facilitated by a suction pump, regulating gas flow, gravity or combinations thereof.</p>
申请公布号 WO1997013141(A1) 申请公布日期 1997.04.10
申请号 US1996015961 申请日期 1996.10.04
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