A METHOD FOR EPITAXIALLY GROWING OBJECTS AND A DEVICE FOR SUCH A GROWTH

摘要

In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part (24) of said source material is provided in a solid state as the material grown in a container comprising the susceptor (7), and said source material part is by heating in said container brought to a vapour state and carried in the vapour state by the carrier gas flow to the substrate for said growth.