Mesastructure semiconductor element manufacturing method

摘要

The method involves using an initial semiconductor substrate provided with diffusion layers of opposite conductivity type on either side, with subsequent application of metallisation layers (4,5). The obtained semiconductor wafer (2) is sawn on one side (11) for defining the peripheral contour of the semiconductor element. The saw grooves (12) act as guides for an auxiliary device (1) with at least one scriber (18), used to obtain auxiliary lines on the opposite side (13) of the wafer, parallel to the saw lines.