发明名称 |
Method of etching silicon carbide |
摘要 |
A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch. |
申请公布号 |
EP0767490(A1) |
申请公布日期 |
1997.04.09 |
申请号 |
EP19960115214 |
申请日期 |
1996.09.23 |
申请人 |
MOTOROLA, INC. |
发明人 |
THERO, CHRISTINE;NORTON, PATRICIA A. |
分类号 |
C23F4/00;H01L21/04;H01L21/302;H01L21/3065 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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