发明名称 |
Method of fabricating power semiconductor device and lead frame |
摘要 |
Disclosed herein are a method of fabricating a power semiconductor device which is excellent in heat radiation of a power semiconductor chip and copes with improvement in function, increase in pin number and refinement in package of a control semiconductor chip, and a lead frame simplifying automation of assembling. Joiners (205) vertically extend from outer sides of leads (203, 204) of a tie bar (201) of a power circuit lead frame (20) respectively, while joiners (308) vertically extend from outer sides of leads (303, 307) of a tie bar (301) of a control circuit lead frame (30) respectively to be opposed thereto. Forward end portions (205a) of the joiners (205) are joined to rear surfaces of forward end portions (308a) of the joiners (308) at a device center portion. <IMAGE> |
申请公布号 |
EP0767494(A2) |
申请公布日期 |
1997.04.09 |
申请号 |
EP19960109264 |
申请日期 |
1996.06.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MASUMOTO, TOSHIKAZU;TAKAHAMA, SHINOBU |
分类号 |
H01L25/07;H01L23/495;H01L23/50;H01L25/18 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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