| 摘要 |
<p>A split-poly method for forming a buried contact between two sidewall spacers, and the semiconductor structure formed according to such a method is disclosed, wherein: an implanted region is formed in an opening through a thin first polysilicon and dielectric formed over a surface of an active region of first conductivity type in a semiconducting body; sidewall spacers are formed at the edges of the opening; and second conductor is formed over the implanted region, the sidewall spacers, and the first polysilicon, and is patterned to form a gate. The contact of the gate and the implanted region is the buried contact. <IMAGE></p> |
