| 摘要 |
PROBLEM TO BE SOLVED: To simplify the process for forming a contact hole where the insulation is ensured while being self-aligned with a conductive pattern. SOLUTION: An insulation layer 13 of photosensitive SOG or polysilane derivative is formed on a conductive layer 12 and subjected to pattern pattern exposure and development to form an offset insulation layer 13a. Etching is then effected using the offset insulation layer 13a as a mask thus forming a conductive pattern 12a. Subsequently, a side wall is formed on the conductive pattern 12a and offset insulation layer 13a. After forming an interlayer insulation layer covering the side wall and offset insulation layer 13a, the interlayer insulation layer is etched using the side wall as a stopper to make a contact hole reaching the substrate 11. This method eliminates the steps for forming and removing a resist pattern required for formation of the offset insulation layer 13a. |
