发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To improve the resolving power of a contact hole, the depth of a focus of the hole and deep UV curability without deteriorating the balance of various properties by incoporating an alkali-soluble resin and naphthoquinonediazidosulfonic ester of a polyhydroxy compd. having a specified nuclear structure. SOLUTION: This photoresist compsn. contains an alkali-soluble resin and at least one kind of 1,2-naphthoquinonediazido-5-(and/or-4-)sulfonic ester of a polyhydroxy compd. represented by formula I, II or III. In the formula I-III, each of R1 -R8 is H, hydroxyl, optionally substd. alkyl, etc., each of R9 -R17 is H, optionally substd. alkyl, alkoxy, etc., at least one of R1 -R17 is allyl, each of X1 -X4 is H, alkyl, etc., and each of (m) and (n) is an integer of 0-2.
申请公布号 JPH0996904(A) 申请公布日期 1997.04.08
申请号 JP19950253475 申请日期 1995.09.29
申请人 FUJI PHOTO FILM CO LTD 发明人 MOMOTA ATSUSHI;SATO KENICHIRO;TAN SHIRO;KODAMA KUNIHIKO
分类号 G03F7/022;G03F7/039;H01L21/027;(IPC1-7):G03F7/022 主分类号 G03F7/022
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