| 摘要 |
PROBLEM TO BE SOLVED: To prevent a short-circuit between a wiring and a connection wire due to misalignment in photoengraving by a method wherein a second wiring is formed via an interlayer insulation film on a first etching stopper film formed so as to cover an upper face and a side face of a first wiring, and a second etching stopper film is formed so as to cover an upper portion and a side face of the second wiring. SOLUTION: A first wiring 3 is formed on a semiconductor substrate 1 having a semiconductor area 1a being a source/drain area. An upper face and a side face of the first wiring 3 are formed so as to be covered with a first etching stopper film 5, and a second wiring 7 is formed via an interlayer insulation film 6 on the first etching stopper film 5. An upper portion and a side face of the second wiring 7 are covered to form a second etching stopper film 12. Thus, it is possible to prevent a short-circuit between a wiring and a contact 10a due to misalignment in photoengraving. |
