| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which a ferroelectric memory which can secure a degree of freedom in design and can improve the characteristics of a transistor can be manufactured. SOLUTION: After a contact layer 3 is formed on the surface of an Si substrate 1, a thin film capacitor section 15 composed of a TiN film, a Pt film 12, a strain inducing BaSrTiO3 film 13 and a Pt film 14 is formed on the substrate 1 so that the section 15 can come into contact with the layer 3. A conductive layer 22 is provided on the contact layer 3 and a transistor layer 36 is formed on an insulating layer 21 so that the section 36 can come into contact with the layer 3. |
