发明名称 |
SRAM semiconductor device |
摘要 |
The present invention provides an improved static random access memory which can be manufactured into values as designed by photolithography. Second direct contract for connecting active region and ground line for first and second memory cells is provided at a boundary between the first memory cell and second memory cell. Second direct contact is divided into a plurality of portions.
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申请公布号 |
US5619056(A) |
申请公布日期 |
1997.04.08 |
申请号 |
US19960693497 |
申请日期 |
1996.08.07 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KURIYAMA, HIROTADA;ISHIDA, MASAHIRO;ISHIGAKI, YOSHIYUKI |
分类号 |
H01L27/11;H01L21/8244;(IPC1-7):H01L29/76;H01L27/108 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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