| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of storing a compound semiconductor wafer of high Al crystal mixing ratio preventing an unstable hydroxide film from being formed on its surface by a simple structure. SOLUTION: A compound semiconductor wafer 10 such as a GaAlAs compound semiconductor wafer which contains Al as a mixed crystal component, is stored through a method which comprises two steps, one is that the surface of the semiconductor wafer 10 is cleaned up, and the other is that a stable protecting film 15 is formed on the surface of the semiconductor wafer 10. A protecting film forming step is pertinently carried out through such a manner that the semiconductor wafer 10 whose surface is cleaned up is dipped into an H2 O2 +NH3 aqueous solution to be coated with an Al natural oxide film 15a. |
