发明名称 METHOD FOR ANALYZING SURFACE IMPURITIES IN MINUTE AREA AND APPARATUS EXECUTING THE METHOD
摘要 PROBLEM TO BE SOLVED: To analyze surface impurities of a minute area by narrowing and projecting electron beams accelerated by an acceleration voltage of several kV. SOLUTION: A secondary electron-scanning microscope (SEM apparatus) accelerates thermoelectrons generated by an electron beam generation filament 9 with a high voltage of approximately 3kV, and focuses the electron beams with a condenser lens to collide against a sample 6 as primary electron beams. The contrast corresponding to a surface state of the sample 6 is obtained by scanning the surface of the sample with the primary electron beams. The surface of the sample to be analyzed is thus specified. When the primary electron beams of the SEM apparatus collide against the sample 6, leaving molecules are generates and emitted from the surface. The leaving moleculed are sent to a detector 8 via a gas introduction pipe 11 connecting an ultra-high vacuum stainless chamber 3 with a mass analysis detector 8, and detected. A mass number and a signal intensity are monitored by a monitor 10.
申请公布号 JPH0996614(A) 申请公布日期 1997.04.08
申请号 JP19950253350 申请日期 1995.09.29
申请人 ADVANTEST CORP 发明人 TABUSE KAZUHIKO;WATANABE MASAO
分类号 G01N23/225;H01J37/256;H01J49/42 主分类号 G01N23/225
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