| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor laser element with high efficiency and high output by keeping the internal loss and resistance of it lower and confining carrier inside an active layer securely. SOLUTION: A second n-type clad layer 11, a first n-type clad layer 12, an n-type carrier blocking layer 13, an active layer 14, a p-type carrier blocking layer 15, a fist p-type clad layer 16, a second p-type clad layer 17, a current constricting layer 18 and a p-type contact layer 19 are formed on a substrate 20 in sequence. The carrier blocking layers 13 and 15 are doped with the high density of 1×10<18> cm<-3> or more and the first clad layers 12 and 16, and the second clad layers 11 and 17 are doped with the low density of 3×10<17> cm<-3> or less. Carbon or magnesium with lower diffusivity are used as dopant for the ptype carrier blocking layer 15.
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