| 摘要 |
A programming section of a semiconductor memory device includes an external power source detecting circuit adapted for detecting an initial power supply and for generating a power-up signal, a gate control section for receiving the power-up signal from the external power source detecting circuit and for generating a first signal and a second signal, a programmable ROM cell for receiving the first and second signals from the gate control section and for generating an output, and a latch section for latching the output of the programmable ROM cell. |
